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SUM110P06-07L-E3 Power Mosfet Transistor P-Channel 60-V (D-S) 175℃ MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

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SUM110P06-07L-E3 Power Mosfet Transistor P-Channel 60-V (D-S) 175℃ MOSFET

Model Number : SUM110P06-07L

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9500pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : P-Channel 60 V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)

Drain-Source Voltage : −60 V

Gate-Source Voltage : ±20 V

Pulsed Drain Current : −240 A

Avalanche Current : −75 A

Single Pulse Avalanche Energy : 281 mJ

Operating Junction and Storage Temperature : −55 to 175 ℃

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SUM110P06-07L

P-Channel 60-V (D-S) 175℃ MOSFET

FEATURES

• TrenchFET Power MOSFET

• New Package with Low Thermal Resistance

APPLICATIONS

• Automotive

− 12-V Boardnet

− High-Side Switches

− Motor Drives

ABSOLUTE MAXIMUM RATINGS (T_C = 25℃ UNLESS OTHERWISE NOTED)

Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	−60	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Current^d (T_J = 175℃)	T_C = 25℃	I_D	−110	A
Continuous Drain Current^d (T_J = 175℃)	T_C =125℃	I_D	−95	A
Pulsed Drain Current		I_DM	−240	A
Avalanche Current	L = 0.1 mH	I_AS	-75	A
Single Pulse Avalanche Energy^a	L = 0.1 mH	E_AS	281	mJ
Power Dissipation	T_C = 25℃	P_D	375^c	W
Power Dissipation	T_A = 25℃^b	P_D	3.75	W
Operating Junction and Storage Temperature Range		T_J, Tstg	−55 to 175	℃

Notes:

a. Duty cycle 1%.

b. When mounted on 1” square PCB (FR-4 material).

c. See SOA curve for voltage derating.

d. Limited by package.

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

S25FL512SAGMFI013	3723	SPANSION	15+	SOP-16
S29AL016D70TFI010	5204	SPANSION	08+	TSSOP-48
S29JL064H90TFI00	5068	SPANSION	06+	TSSOP-48
S2B-PH-K-S	167000	JST	14+	SMD
S2J-E3/52T	75000	VISHAY	15+	DO-214AA
S2S4BYOF	13830	SHARP	16+	SOP-4
S34ML08G101BHI000	2100	SPANSION	16+	BGA63
S3A-E3/57T	8500	VISHAY	16+	DO-214AB
S3B-13-F	67000	DIODES	16+	DO-214AB
S3C6410X66-YB40	2983	SAMSUNG	14+	BGA
S3F9454BZZ-DK94	5833	SAMSUNG	09+	DIP
S4X8ES	69000	LITTELFUS	10+	TO-92
S558-5500-25-F	5804	BELFUSE	15+	SOP-16
S5B-PH-K-S(LF)(SN)	94000	JST	16+	NA
S5M-E3/57T	77000	VISHAY	16+	DO-214AB
S6040R	8070	LITTELFUS	14+	TO-220
S6B-XH-SM4-TB(LF)(SN)	7573	JST	16+	SMD
S7B-PH-SM4-TB(LF)(SN)	23131	JST	13+	SMD
S8025L	8041	TECCOR	07+	TO-220
S8065K	5681	TECCOR	16+	TO-3P
SAB80C517A-N18-T3	2443		14+	PLCC84
SAFEA2G35MB0F00R15	6517	MURATA	16+	SMD
SAFEA2G59MA0F00R14	6588	MURATA	14+	SMD
SAK-C167CS-LMCA	2470		16+	QFP
SAM2695	1959	DREAM	15+	QFN
SB260-E3	25000	VISHAY	13+	DO-15
SB360-E3/54	12000	VISHAY	16+	DO-201AD
SB560-E3/73	170000	VISHAY	16+	DO-201AD
SBR10E45P5-13	96000	DIODES	14+	POWERDI5
SC1527	42000	SC	14+	SOP-8

Product Tags:

power mosfet ic

silicon power transistors

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