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FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

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FDS8858CZ Integrated circuit Chip IC Electronics Original Diodes IC Chip

Brand Name : FSC

Model Number : FDS8858CZ

Certification : Original Factory Pack

Place of Origin : Malaysia

MOQ : 100pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5000PCS

Delivery Time : 1 Day

Packaging Details : REEL

Description : Mosfet Array 30V 8.6A, 7.3A 900mW Surface Mount 8-SOIC

Temperature Range : –55°C to +150 °C

Typical Thermal Resistance : -7.3A

Voltage : -30V

Forward Surge Current : 40-78 °C/w

Package : SOP-8

Factory Package : REEL

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FDS8858CZ

Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0mΩ

P-Channel: -30V, -7.3A, 20.5mΩ

Features

Q1: N-Channel „ Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A „

Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel „

Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A „

Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A „

High power and handing capability in a widely used surface mount package

Fast switching speedt

General Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Application „

Inverter „ Synchronous Buck

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Unit
VDS Drain to Source Voltage 30 -30 V
VGS Gate to Source Voltage ±20 ±25 V
Id Drain Current - Continuous TA = 25°C 8.6 -7.3 A
-Pulsed 20 -20
Pd Power Dissipation for Dual Operation 2.0 w
Power Dissipation for Single Operation TA = 25°C 1.6
TA = 25°C 0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C


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