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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

ChongMing Group (HK) Int'l Co., Ltd
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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

Model Number : FGA25N120ANTD

Certification : new & origianl

Place of Origin : original factory

MOQ : 10 pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 4800pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P

Collector-Emitter Voltage : 1200 V

Gate-Emitter Voltage : ± 20 V

Pulsed Collector Current : 90 A

Diode Maximum Forward Current : 150 A

Operating Junction Temperature : -55 to +150 °C

Storage Temperature Range : -55 to +150 °C

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FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C

• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C

• Extremely enhanced avalanche capability

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

Absolute Maximum Ratings

Symbol Description FGA25N120ANTD Units
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current @ TC = 25°C 50 A
Collector Current @ TC = 100°C 25 A
ICM Pulsed Collector Current (Note 1) 90 A
IF Diode Continuous Forward Current @ TC = 100°C 25 A
IFM Diode Maximum Forward Current 150 A
PD Maximum Power Dissipation @ TC = 25°C 312 W
Maximum Power Dissipation @ TC = 100°C 125 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL

Maximum Lead Temp. for soldering Purposes,

1/8” from case for 5 seconds

300 °C

Mechanical Dimensions

TO-3PN


Product Tags:

npn smd transistor

      

multi emitter transistor

      
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