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Model Number : PMBD914
Certification : new & original
Place of Origin : original factory
MOQ : 20pcs
Price : Negotiate
Payment Terms : T/T, Western Union, Paypal
Supply Ability : 9300pcs
Delivery Time : 1 day
Packaging Details : Please contact me for details
Description : Diode 100 V 215mA Surface Mount TO-236AB
repetitive peak reverse voltage : 100 V
reverse voltage : 100 V
forward current : 215 mA
total power dissipation Tamb ≤ 25 °C : 250 mW
junction temperature : 150 °C
storage temperature : −65 to +150 °C
PMBD914 high power Single high speed switching diode 100 V repetitive peak reverse voltage
PMBD914
Single high-speed switching diode
General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
Features
■ High switching speed: trr ≤ 4 ns
■ Low capacitance: Cd ≤ 1.5 pF
■ Low leakage current
■ Reverse voltage: VR ≤ 100 V
■ Repetitive peak reverse voltage: VRRM ≤ 100 V
■ Small SMD plastic package
Applications
■ High-speed switching
Quick reference data
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | 
| IF | forward current | [1] | - | - | 215 | mA | 
| VR | reverse voltage | - | - | 100 | V | |
| trr | reverse recovery time | [2] | - | - | 4 | ns | 
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
| Symbol | Parameter | Conditions | Min | Max | Unit | 
| VRRM | repetitive peak reverse voltage | - | 100 | V | |
| VR | reverse voltage | - | 100 | V | |
| IF | forward current | [1] | - | 215 | mA | 
| IFRM | repetitive peak forward current | - | 500 | mA | |
| 
			 IFSM 
 
 
  | 
			
			 non-repetitive peak forward current 
 
 
  | 
			square wave [2] | |||
| tp = 1 µs | - | 4 | A | ||
| tp = 1 ms | - | 1 | A | ||
| tp = 1 s | - | 0.5 | A | ||
| Ptot | total power dissipation | Tamb ≤ 25 °C [1][3] | - | 250 | mW | 
| Tj | junction temperature | - | 150 | °C | |
| Tstg | storage temperature | −65 | +150 | °C | 
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj = 25 °C prior to surge.
[3] Soldering point of cathode tab.
Reverse recovery time test circuit and waveforms
Forward recovery voltage test circuit and waveforms
Package outline SOT23 (TO-236AB)
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                        PMBD914,235 high power Single high speed switching diode 100 V repetitive peak reverse voltage Images |